ut2n10 preliminary power mosfet unisonic technologies co., ltd 1 of 3 www.unisonic.com.tw qw-r502-511.a 2 amps,100 volts n-channel power mosfet ? description the utc ut2n10 is n-channel enhancement mode silicon gate power fet.it uses a special gate oxide designed to provide full rated conductance at gate biases throug h 3v ~ 5v and facilitate true on-off power control directly from logic circuit supply voltages. the utc ut2n10 is universally applied in logic level (5v) driving sources, such as automotive switch ing, solenoid drivers and programmable controllers. ? features * 2a, 100v * r ds(on) = 1.050 ? * design optimized for 5v gate drives * can be driven directly from qmos, nmos, ttl circuits * compatible with automotive drive requirements * soa is power dissipation limited * nanosecond switching speeds * linear transfer characteristics * high input impedance * majority carrier device ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT2N10L-TN3-R ut2n10g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
ut2n10 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-511.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (note 1) v dss 100 v gate-source voltage v gss 10 v drain-gate voltage (r gs =1m ? ) (note 1) v dgr 100 v continuous i d 2 a drain current pulsed (note 3) i dm 5 a power dissipation p d 25 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 100 v v ds = rated bv dss , v gs = 0v 1.0 drain-source leakage current i dss v ds = 0.8 x rated bv dss , v gs = 0v, t c = 125c 25 a forward v gs =+10v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-10v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 2.0 v drain-source on voltage (note 2) v ds(on) v gs =5v, i d =2a 2.1 v static drain-source on-state resistance (note 2) r ds(on) v gs =5v, i d =2a 1.050 ? dynamic parameters input capacitance c iss 200 pf output capacitance c oss 80 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 35 pf thermal resistance junction to case r jc 5 c/w switching parameters turn-on delay time t d(on) 10 25 ns rise time t r 15 45 ns turn-off delay time t d(off) 25 45 ns fall-time t f v dd =50v, i d =2a, r g =6.25 ? , r l =25 ? , v gs =5v 20 25 ns source- drain diode ratings and characteristics drain-source diode forward voltage (note 2) v sd i sd =2a 1.4 v body diode reverse recovery time t rr i sd =2a, di sd /dt=50a/s 100 ns note: 1. t j = 25c ~ 125c. 2. pulse test: pulse width 300ms, duty cycle 2%. 3. repetitive rating: pulse width limi ted by maximum junction temperature.
ut2n10 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-511.a ? test circuits and waveforms out r l + - v dd v gs 90% t r t d(on) t on v ds 0 10% v gs 0 10% pluse width 50% 90% 50% 10% 90% t f t d(off) t off switching time test circuit resistive switching waveforms r g utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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